Title :
Texture evolutions of ionized metal plasma Cu seed layers on tantalum nitride barriers
Author :
Chang, Shih-Chieh ; Wang, Ying-Lang ; Wang, Ting-Chun
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Tainan, Taiwan
Abstract :
Ionized metal plasma (IMP) was a favorable method for the deposition of thin barrier and seed layers due to its sufficient bottom coverage in high aspect ratio features. In this study, the texture evolution of IMP copper (Cu) seed layers on IMP tantalum nitride barriers deposited by various nitrogen flow rates were investigated. The (111)/(200) ratio of the Cu seeds was found to relate to the grain size of the tantalum nitride substrates. A proposed model revealed that the surface energy reduction of the Cu deposition was a main factor to determine the (111)/(200) ratio of the Cu seeds.
Keywords :
copper; electrical resistivity; grain size; integrated circuit metallisation; metal-insulator boundaries; metallic thin films; nucleation; plasma deposition; surface energy; surface roughness; surface texture; Cu deposition; Cu-TaN; antalum nitride substrate; electrical resistivity; grain size; ionized metal plasma Cu seed layers; ionized metal plasma tantalum nitride barriers; nucleation; surface energy reduction; surface roughness; texture evolution; Adhesives; Chemical vapor deposition; Conductivity; Copper; Metallization; Nitrogen; Plasmas; Surface resistance; Thermal resistance; Thermal stability; Barrier layer; copper seed layer; ionized metal plasma; nitrogen flow; tantalum nitride; texture transformation;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2004.831535
