A W-band medium power multi-stack quantum barrier varactor frequency tripler

Author

Rahal, Ali ; Bosisio, R.G. ; Rogers, C. ; Ovey, J. ; Sawan, M. ; Missous, M.

Author_Institution

Centre de Recherche POLY-GRAMES, Ecole Polytech. de Montreal, Que., Canada

Volume

5

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

368

Lastpage

370

Abstract

Conventional multi-stack quantum barrier varactor (MSQBV) diodes on GaAs suffer from leaky barriers and low breakdown voltage, which limits their performance in high-power applications. Using a lattice-matched InGaAs/InAlAs/InGaAs barriers on InP we have grown a new 10-stack device. Measurement results are presented that demonstrate low series resistance, large capacitance modulation, and significantly higher breakdown voltage than previously reported devices. The power capability of this new device has been investigated by simulations and measurements. An experiment in a waveguide tripler circuit shows a 19.6 dBm output power at 93 GHz. This is the highest output power reported from a single QBV device at W-band

Keywords

III-V semiconductors; frequency multipliers; indium compounds; millimetre wave diodes; millimetre wave frequency convertors; varactors; 93 GHz; InGaAs-InAlAs-InGaAs; InP; MSQBV diode; W-band; breakdown voltage; capacitance modulation; lattice-matched barriers; medium power; multi-stack quantum barrier varactor frequency tripler; series resistance; simulation; waveguide circuit; Capacitance measurement; Diodes; Electrical resistance measurement; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Power generation; Quantum capacitance; Varactors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.473540

Filename

473540