Title :
High transconductance modulation-doped SiGe pMOSFETs by RPCVD
Author :
Young-Joo Song ; Jung-Wook Lim ; Jin-Young Kang ; Kyu-Hwan Shim
Author_Institution :
Wireless Commun. Device Res. Group, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
A modulation-doped SiGe pMOSFET with a high transconductance (G/sub m/) has been successfully fabricated through well-controlled boron /spl delta/-doping by reduced pressure chemical vapour deposition (RPCVD). Compared to a Si-control pMOSFET, it shows 30% enhanced G/sub m/ up to 102 mS/mm for 0.3 /spl mu/m gate length, which is even larger than the reported value of a molecular beam epitaxy grown SiGe pMOSFET with a similar device design.
Keywords :
Ge-Si alloys; MOSFET; chemical vapour deposition; doping profiles; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor materials; semiconductor quantum wells; 0.3 micron; 102 mS/mm; RPCVD; SIMS profile; Si-SiGe:B-Si; gate length; high transconductance modulation-doped SiGe pMOSFETs; quantum well layers; reduced pressure chemical vapour deposition; transconductance enhancement; well-controlled B /spl delta/-doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020970
