DocumentCode :
1054895
Title :
IVB-5 effect of interface traps on the GaAs planar devices
Author :
Tanimoto, Masahiro ; Suzuki, Kenji ; Itoh, Takayuki ; Ikoma, Takashi ; Yanai, H. ; Kaufmann, L.M.F. ; Heime, K.
Volume :
23
Issue :
11
fYear :
1976
fDate :
11/1/1976 12:00:00 AM
Firstpage :
1258
Lastpage :
1259
Keywords :
Current density; Current measurement; Density measurement; Electron traps; Energy measurement; Etching; Gallium arsenide; Pulse measurements; Time measurement; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18627
Filename :
1478640
Link To Document :
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