Title :
IVB-6 an in-situ technique for anodic etch to voltage preparation of GaAs Read diodes
fDate :
11/1/1976 12:00:00 AM
Keywords :
Annealing; Contracts; Etching; FETs; Fabrication; Gallium arsenide; Oxidation; Schottky diodes; Surface morphology; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18629
