Title :
Threshold Voltage Model of Short-Channel FD-SOI MOSFETs With Vertical Gaussian Profile
Author :
Zhang, Guohe ; Shao, Zhibiao ; Zhou, Kai
fDate :
3/1/2008 12:00:00 AM
Abstract :
A novel approximation of 2-D potential function perpendicular to the channel for fully depleted (FD) silicon-on-insulator (SOI) MOSFETs on films with vertical Gaussian profile is proposed in the paper, then an analytical threshold voltage model is derived. The model agrees well with the MEDICI numerical simulation results. It represents a feasible way to find the threshold voltage and gives some reference points in developing new 2-D models for nonuniform FD-SOI devices.
Keywords :
Gaussian processes; MOSFET; silicon-on-insulator; short-channel FD-SOI MOSFET; threshold voltage model; vertical Gaussian profile; Analytical models; Annealing; Collision mitigation; Doping; Gaussian distribution; MOSFETs; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Fully depleted (FD) silicon-on-insulator (SOI) MOSFETs; Gaussian; threshold voltage model;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.914832
