DocumentCode
1055114
Title
Characteristics of the indium-doped infrared sensing MOSFET(IRFET)
Author
Forbes, Leonard ; Wittmer, Leon L. ; Loh, K.W.
Author_Institution
University of California, Davis, CA
Volume
23
Issue
12
fYear
1976
fDate
12/1/1976 12:00:00 AM
Firstpage
1272
Lastpage
1278
Abstract
The operation and characteristics of the indium-doped infrared sensing MOSFET(IRFET) in the 2.0- to 7.0-µm wavelength range are described. Responsivities of 4.8 mA/µJ are easily achieved using relatively large devices with small W/L ratios. Determination of the thermal emission rate of the indium center in silicon indicates that operating temperatures of lower than 50 K are required. Application considerations in large-scale integrated infrared imaging arrays are discussed. The measurement of the thermal emission rate and photoionization cross section of indium also demonstrates the capability of the MOSFET device structure in characterizing shallower level impurity centers in silicon.
Keywords
Equations; Helium; Impurities; Indium; Intrusion detection; Ionization; MOSFET circuits; Silicon; Temperature sensors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1976.18649
Filename
1478662
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