Title :
Ga2O3(Gd2O3) as a Charge-Trapping Layer for Nonvolatile Memory Applications
Author :
Huang, X.D. ; Sin, Johnny K. O. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
The charge-trapping characteristics of Ga2O3 (Gd2O3) (denoted as GGO) with and without nitrogen incorporation were investigated based on Al/Al2O3/GGO/SiO2/Si (metalalumina-nitride-oxide-silicon) capacitors. Compared with the capacitor without nitrogen incorporation, the one with nitrided GGO showed a larger memory window (10 V at ±16 V, 1 s), a higher program speed with a low gate voltage (2.2V at +8 V, 100 μs), and a better retention property (charge loss of 9.7% after 104 s at 125°C) mainly due to higher charge-trapping efficiency of the nitrided GGO film and the nitrogen-induced suppressed formation of the undesirable silicate interlayer at the GGO/SiO2 interface, as confirmed by the transmission electron microscopy and the X-ray photoelectron spectroscopy.
Keywords :
MOS capacitors; X-ray photoelectron spectra; aluminium; aluminium compounds; elemental semiconductors; gadolinium compounds; gallium compounds; random-access storage; silicon; silicon compounds; thin films; transmission electron microscopy; Al-Al2O3-Ga2O3(Gd2O3)-SiO2-Si; X-ray photoelectron spectroscopy; charge-trapping layer; gate voltage; memory window; metal-alumina-nitride-oxide-silicon capacitors; nitrided GGO film; nitrogen-induced suppressed formation; nonvolatile memory applications; retention property; temperature 125 degC; time 100 mus; transmission electron microscopy; voltage -16 V; voltage 10 V; voltage 16 V; voltage 2.2 V; voltage 8 V; Capacitors; Films; Nitrogen; Silicon; Stress; Substrates; Tunneling; Charge-trapping layer; Ga$_{2}$O$_{3}$ (Gd$_{2}$O$_{3}$ ); high-$k$; nitridation; nonvolatile memory;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2012.2236350
