Title :
Determination of minority-carrier lifetimes of bipolar transistors from low-current hFEfall-off
Author :
Chamberlain, N.G. ; Roulston, D.J.
Author_Institution :
University of Waterloo, Ont., Canada
fDate :
12/1/1976 12:00:00 AM
Abstract :
The minority-carrier lifetimes τn0and τp0of bipolar transistors are determined from low-cufrent hFEfall-off. The relative magnitude of surface space-charge-layer recombination current is taken into account. This method is particularly attractive in achieving accurate computer models of bipolar transistors suitable for network analysis and design.
Keywords :
Bipolar transistors; Computer networks; Computer simulation; Councils; Current measurement; Density measurement; Doping; Iron; Leakage current; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18662
