• DocumentCode
    1055245
  • Title

    Determination of minority-carrier lifetimes of bipolar transistors from low-current hFEfall-off

  • Author

    Chamberlain, N.G. ; Roulston, D.J.

  • Author_Institution
    University of Waterloo, Ont., Canada
  • Volume
    23
  • Issue
    12
  • fYear
    1976
  • fDate
    12/1/1976 12:00:00 AM
  • Firstpage
    1346
  • Lastpage
    1348
  • Abstract
    The minority-carrier lifetimes τn0and τp0of bipolar transistors are determined from low-cufrent hFEfall-off. The relative magnitude of surface space-charge-layer recombination current is taken into account. This method is particularly attractive in achieving accurate computer models of bipolar transistors suitable for network analysis and design.
  • Keywords
    Bipolar transistors; Computer networks; Computer simulation; Councils; Current measurement; Density measurement; Doping; Iron; Leakage current; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18662
  • Filename
    1478675
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055245