DocumentCode :
1055293
Title :
Experimental and theoretical studies of third-harmonic generation in the chalcopyrite CdGeAs2
Author :
Chemla, Daniel S. ; Begley, R.F. ; Byer, Robert I.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Bagneax, France
Volume :
10
Issue :
1
fYear :
1974
fDate :
1/1/1974 12:00:00 AM
Firstpage :
71
Lastpage :
81
Abstract :
Experimental and theoretical studies of third-harmonic generation (THG) in the chalcopyrite semiconductor CdGeAs2 are presented. The phase-matching configurations for THG are analyzed from the irreducible components point of view. A theory of the bound electron and free-carrier contribution to the third-order susceptibility is presented. The experimental results are given. The effective nonlinear coefficient for type-II THG is mainly due to the free-carrier contribution, and for a hole concentration of 
/cm3it is measured to be 
ESU. The practical applications of THG in CdGeAs2 are discussed.
/cm3it is measured to be ESU. The practical applications of THG in CdGeAsKeywords :
Birefringence; Electrons; Frequency conversion; Laboratories; Nonlinear optical devices; Nonlinear optics; Optical frequency conversion; Optical harmonic generation; Optical mixing; Tensile stress;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1974.1068091
Filename :
1068091
Link To Document :
