Title :
Saturation behavior of the optical gain in GaAs injection lasers
Author_Institution :
Nippon Electric Company, Ltd., Kawasaki, Japan
fDate :
10/1/1974 12:00:00 AM
Abstract :
A recent analysis of the saturation behavior of the optical gain in semiconductor lasers has predicted a strong spectral hole-burning effect. With an improved treatment of the intraband relaxation in the analysis the effect disappears entirely.
Keywords :
Electron optics; Equations; Gallium arsenide; Optical films; Optical modulation; Optical pumping; Optical saturation; Optical waveguides; Optimized production technology; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1974.1068097
