DocumentCode :
105550
Title :
Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204
Author :
Gow, J.P.D. ; Murray, Neil J. ; Holland, Andrew D. ; Burt, David
Author_Institution :
Centre for Electron. Imaging, Planetary & Space Sci., Open Univ., Milton Keynes, UK
Volume :
61
Issue :
4
fYear :
2014
fDate :
Aug. 2014
Firstpage :
1843
Lastpage :
1848
Abstract :
Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimized using a trap pumping technique to identify the optimal operating conditions at 153 K.
Keywords :
charge exchange; charge-coupled devices; proton effects; CCD204 devices; charge transfer efficiency; e2v technologies plc; like-for-like comparison; mask set; n-channel CCD; p-channel CCD; parallel transfer; proton damange comparison; proton irradiation; relative degradation; trap pumping technique; Charge coupled devices; Charge transfer; Clocks; Market research; Performance evaluation; Protons; Temperature measurement; CCD; charge transfer inefficiency; p-channel; pocket/trap pumping; proton radiation damage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2298254
Filename :
6742620
Link To Document :
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