Proton Damage Comparison of an e2v Technologies n-channel and p-channel CCD204

Author

Gow, J.P.D. ; Murray, Neil J. ; Holland, Andrew D. ; Burt, David

Author_Institution

Centre for Electron. Imaging, Planetary & Space Sci., Open Univ., Milton Keynes, UK

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

1843

Lastpage

1848

Abstract

Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimized using a trap pumping technique to identify the optimal operating conditions at 153 K.

Keywords

charge exchange; charge-coupled devices; proton effects; CCD204 devices; charge transfer efficiency; e2v technologies plc; like-for-like comparison; mask set; n-channel CCD; p-channel CCD; parallel transfer; proton damange comparison; proton irradiation; relative degradation; trap pumping technique; Charge coupled devices; Charge transfer; Clocks; Market research; Performance evaluation; Protons; Temperature measurement; CCD; charge transfer inefficiency; p-channel; pocket/trap pumping; proton radiation damage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2298254

Filename

6742620