Design of MOS-gated bipolar transistors with integral antiparallel diode

Author

Ajit, J.S.

Author_Institution

Int. Rectifier Corp., El Segundo, CA, USA

Volume

17

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

344

Lastpage

347

Abstract

This paper discusses the design of a new power switching device with integral antiparallel diode called MOS gated bipolar transistor (MGBT). The upper region of the MGBT device structure is conductivity-modulated by a positive feedback mechanism to give a lower on-state voltage drop as compared to a power MOSFET while having fast switching and fully MOS-gate controlled characteristics. A comprehensive model for the MGBT is developed and simple analytical equations are used to predict the on-state characteristics of the MGBT. The analytical modeling results are in good agreement with experimental results on fabricated 750 V MGBT devices. The experimentally measured characteristics of the integral antiparallel diode in the MGBT are reported for the first time in this paper.

Keywords

MIS devices; bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; power semiconductor switches; semiconductor device models; 750 V; MGBT; MOS-gated bipolar transistor; conductivity modulation; design; integral antiparallel diode; model; on-state voltage drop; positive feedback; power switching device; Analytical models; Bipolar transistors; Diodes; Feedback; Integral equations; MOSFET circuits; Power MOSFET; Predictive models; Time measurement; Voltage control;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.506362

Filename

506362