Title :
4H-SiC MESFET´s with 42 GHz fmax
Author :
Sriram, Srinath ; Augustine, G. ; Burk, A.A. ; Glass, R.C. ; Hobgood, H.M. ; Orphanos, P.A. ; Rowland, L.B. ; Smith, T.J. ; Brandt, C.D. ; Driver, M.C. ; Hopkins, R.H.
Author_Institution :
Northrop Grumman Sci. & Technol Center, Pittsburgh, PA, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
We report for the first time the development of state-of-the-art SiC MESFETs on high-resistivity 4H-SiC substrates. 0.5 μm gate MESFETs in this material show a new record high fmax of 42 GHz and RF gain of 5.1 dB at 20 GHz. These devices also show simultaneously high drain current, and gate-drain breakdown voltage of 500 mA/mm, and 100 V, respectively showing their potential for RF power applications.
Keywords :
S-parameters; electric breakdown; equivalent circuits; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; semiconductor device models; silicon compounds; substrates; wide band gap semiconductors; 0.5 micron; 100 V; 20 GHz; 42 GHz; 4H-SiC MESFET; 4H-SiC substrates; 5.1 dB; RF power applications; SiC; gate-drain breakdown voltage; high drain current; high-resistivity substrates; Art; Crystals; Gain; Glass; MESFETs; Microwave devices; Radio frequency; Silicon carbide; Substrates; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
