A new FET-based integrated circuit technology: the SASSFET

Author

Parikh, P.A. ; Jiang, W.N. ; Chavarkar, P.M. ; Kiziloglu, K. ; Keller, B. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

17

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

375

Lastpage

377

Abstract

The super self-aligned submicron single-metal FET (SASSFET), a FET-based integrated circuit technology suitable for fabrication of high-speed GaAs and InP circuits, is demonstrated. With nonalloyed source and drain contacts realized by MOCVD regrowth, the SASSFET is a uniform, dense, selfaligned, single-metal technology that achieves submicron dimensions with optical lithography. A 0.4 μm gate length junction HFET fabricated with the SASSFET technology has a transconductance of 380 mS/mm and a good high-frequency performance with f/sub /spl tau// of 45 GHz and f_max of 80 GHz.

Keywords

JFET integrated circuits; field effect MMIC; field effect digital integrated circuits; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; photolithography; 0.4 micron; 380 mS/mm; 45 GHz; 80 GHz; FET-based IC technology; GaAs; InP; JHFET; MOCVD regrowth; SASSFET; high-speed GaAs circuits; high-speed InP circuits; junction HFET; nonalloyed drain contacts; nonalloyed source contacts; optical lithography; super self-aligned submicron single-metal FET; FETs; Gallium arsenide; HEMTs; High speed optical techniques; Indium phosphide; Integrated circuit technology; Lithography; MOCVD; MODFETs; Optical device fabrication;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.506372

Filename

506372