Title :
A new FET-based integrated circuit technology: the SASSFET
Author :
Parikh, P.A. ; Jiang, W.N. ; Chavarkar, P.M. ; Kiziloglu, K. ; Keller, B. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
The super self-aligned submicron single-metal FET (SASSFET), a FET-based integrated circuit technology suitable for fabrication of high-speed GaAs and InP circuits, is demonstrated. With nonalloyed source and drain contacts realized by MOCVD regrowth, the SASSFET is a uniform, dense, selfaligned, single-metal technology that achieves submicron dimensions with optical lithography. A 0.4 μm gate length junction HFET fabricated with the SASSFET technology has a transconductance of 380 mS/mm and a good high-frequency performance with f/sub /spl tau// of 45 GHz and fmax of 80 GHz.
Keywords :
JFET integrated circuits; field effect MMIC; field effect digital integrated circuits; field effect integrated circuits; gallium arsenide; indium compounds; integrated circuit technology; photolithography; 0.4 micron; 380 mS/mm; 45 GHz; 80 GHz; FET-based IC technology; GaAs; InP; JHFET; MOCVD regrowth; SASSFET; high-speed GaAs circuits; high-speed InP circuits; junction HFET; nonalloyed drain contacts; nonalloyed source contacts; optical lithography; super self-aligned submicron single-metal FET; FETs; Gallium arsenide; HEMTs; High speed optical techniques; Indium phosphide; Integrated circuit technology; Lithography; MOCVD; MODFETs; Optical device fabrication;
Journal_Title :
Electron Device Letters, IEEE
