DocumentCode
1055619
Title
Kink effect in an InAs inserted-channel InAlAs/InGaAs inverted HEMT at low temperature
Author
Akazaki, Tatsushi ; Takayanagi, Hideaki ; Enoki, Takatomo
Author_Institution
NTT Basic Res. Labs., Kanagawa, Japan
Volume
17
Issue
7
fYear
1996
fDate
7/1/1996 12:00:00 AM
Firstpage
378
Lastpage
380
Abstract
The authors have investigated the kink effect In an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature. The kink effect was not observed at both 77 and 300 K, but it appeared at 4.2 K. It is shown that the kink effect is caused at low drain voltages by the suppression of the drain current due to an increase in the source access resistance and at higher drain voltages by the increase in the drain current due to holes generated by impact ionization.
Keywords
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; 4.2 to 300 K; InAlAs-InGaAs; InAs; InAs inserted-channel; drain current suppression; impact ionization; inverted HEMT; kink effect; low drain voltages; low temperature; source access resistance; Current measurement; Density measurement; Electrons; FETs; HEMTs; Impact ionization; Indium gallium arsenide; Intrusion detection; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.506373
Filename
506373
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