Title :
Characterization of Domain Switching Behavior of MTJ Cells Using Magnetic Force Microscopy (MFM) and R–H Loop Analysis
Author :
Heo, Jinhee ; Kim, Kyohyeok ; Kim, Taewan ; Chung, Ilsub
Author_Institution :
Korea Sci. & Eng. Found., Daejeon
fDate :
3/1/2008 12:00:00 AM
Abstract :
Correlation between electrical and magnetic properties of magnetic tunnel junctions (MTJ) for magnetic random access memory (MRAM) was studied. The MTJ (Ta/NiFeCr/ PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe/Ta) was analyzed by utilizing R-H loops and MFM images. We verified that a kink in an R-H loop comes from a vortex domain of free layer. In addition, we also observed a close relationship between a domain switching behavior and an irregular R-H curve. These results would be useful for the characterization of the MTJ cell, thereby optimizing the process to realize an ultrahigh density MRAM.
Keywords :
aluminium compounds; chromium alloys; cobalt alloys; iron alloys; magnetic domains; magnetic force microscopy; magnetic storage; magnetic switching; magnetic tunnelling; manganese alloys; nickel alloys; platinum alloys; random-access storage; ruthenium; tantalum; R-H loop analysis; Ta-NiFeCr-PtMn-CoFe-Ru-CoFe-Al2O3-CoFe-NiFe-Ta; domain switching; magnetic force microscopy; magnetic random access memory; magnetic tunnel junctions; Magnetic force microscopy (MFM); Magnetic random access memort (MRAM); magnetic force microscopy(MFM); magnetic random access memory (MRAM); magnetic tunneling junction (MTJ); vortex;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2008.917842
