Title :
Double boron implant short-channel MOSFET
Author :
Wang, Peng Peng ; Wang, Paul P.
Author_Institution :
IBM Corporation, Kingston, NY
fDate :
3/1/1977 12:00:00 AM
Abstract :
Threshold voltage and current-voltage characteristics are presented for a double boron-ion-implanted-n-channel enhancement MOSFET device for high speed logic circuit applications. A 15-Ω. cm-high resistivity p-type
Keywords :
Boron; Capacitance; Conductivity; Doping profiles; Implants; Ion implantation; MOSFET circuits; Performance analysis; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18709
