• DocumentCode
    1055836
  • Title

    Theory of optical gain and threshold properties of semiconductor lasers

  • Author

    Aleksanian, A.G. ; Poluektov, I.A. ; Popov, Yu.M.

  • Author_Institution
    Armenian Academy of Sciences, Ashtarak, USSR
  • Volume
    10
  • Issue
    3
  • fYear
    1974
  • fDate
    3/1/1974 12:00:00 AM
  • Firstpage
    297
  • Lastpage
    305
  • Abstract
    The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.
  • Keywords
    Electron optics; Frequency; Green function; Laser modes; Laser theory; Laser transitions; Semiconductor device doping; Semiconductor impurities; Semiconductor lasers; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1974.1068141
  • Filename
    1068141
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055836