• DocumentCode
    1055918
  • Title

    Determination of dopant profiles by voltage measurements

  • Author

    Lehovec, Kurt ; Chen, Chih-Hong

  • Author_Institution
    University of Southern California, Los Angeles, CA
  • Volume
    24
  • Issue
    3
  • fYear
    1977
  • fDate
    3/1/1977 12:00:00 AM
  • Firstpage
    284
  • Lastpage
    286
  • Abstract
    The dopant profile in the channel of a double-gated J-FET with uniformly doped channel and substrate is determined from measurements of gate voltage pairs at pinchoff. This procedure offers advantages over the C-V method in cases of imprecisely known gate area, or in the presence of significant stray capacitance.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Equations; Impurities; Niobium; P-n junctions; Schottky diodes; Semiconductor diodes; Substrates; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18726
  • Filename
    1478918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055918