Title :
Onset of heavy inversion in MOS devices doped nonuniformly near the surface
Author_Institution :
Siemens AG, Munich, Germany
fDate :
3/1/1977 12:00:00 AM
Abstract :
A general definition for the onset of heavy inversion at the semiconductor surface is derived, which includes the effect of nonuniform impurity concentration near the surface caused, for instance, by thermal oxidation.
Keywords :
Charge coupled devices; Clocks; Electron devices; Filling; Frequency; MOS devices; Oxidation; Potential well; Pulse measurements; Semiconductor impurities;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18728
