• DocumentCode
    1056040
  • Title

    A first order theory of the p+-n-n+edge-illuminated silicon solar cell at very high injection levels

  • Author

    Goradia, Chandra ; Sater, Bernard L.

  • Author_Institution
    Cleveland State University, Cleveland, OH
  • Volume
    24
  • Issue
    4
  • fYear
    1977
  • fDate
    4/1/1977 12:00:00 AM
  • Firstpage
    342
  • Lastpage
    351
  • Abstract
    A first order theory of the edge-illuminated p+-n-n+silicon solar cell under very high injection levels has been derived. The very high injection level illuminated J-V characteristic is derived for any general base width to diffusion length ( W/L ) ratio and it includes the minority carrier reflection by the n-n+high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jscand Vocon temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.
  • Keywords
    Electrons; Energy conversion; Lighting; Partial differential equations; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Poisson equations; Silicon; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18739
  • Filename
    1478931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056040