A first order theory of the p+-n-n+edge-illuminated silicon solar cell at very high injection levels

A first order theory of the edge-illuminated p⁺-n-n⁺silicon solar cell under very high injection levels has been derived. The very high injection level illuminated characteristic is derived for any general base width to diffusion length ( ) ratio and it includes the minority carrier reflection by the n-n⁺high-low junction. The beneficial effects of the high-low junction are shown to be significant until extremely high injection levels are reached. The theoretical dependencies of Jscand Vocon temperature, incident intensity, and base resistivity are derived and discussed in detail. Some experimental results are given and these are discussed in relation to the theory.