• DocumentCode
    1056055
  • Title

    Power absorption corresponding to ion losses in parallel-plate RF discharges

  • Author

    Sato, Arthur H.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    19
  • Issue
    2
  • fYear
    1991
  • fDate
    4/1/1991 12:00:00 AM
  • Firstpage
    214
  • Lastpage
    218
  • Abstract
    A simple model of a symmetric parallel-plate RF discharge is studied to illustrate how such discharges may absorb power from an RF power supply in order to sustain DC power losses corresponding to the steady acceleration of ions through the sheaths. The motions of the sheath boundaries over one period are derived assuming that the current density varies sinusoidally. One finds that the sheath thickness increases discontinuously at one sheath whenever the plasma contacts the opposing electrode. This implies that the external power supply delivers an electron pulse from the electrode at higher potential to the electrode at lower potential, so that some power is being absorbed in a pulsed fashion. The power absorbed by the discharge is also calculated for the portions of the RF cycle where the current varies sinusoidally. It is found that power is supplied by the discharge in this phase of the RF cycle, with the energy coming from the deflating sheaths. It is further shown that the sum of the pulsed power absorption and smooth power generation, averaged over one RF period, is equal to the DC ion power losses arising from ions falling through the time-averaged sheath potentials
  • Keywords
    high-frequency discharges; plasma sheaths; plasma simulation; ion losses; model; pulsed power absorption; sheaths; smooth power generation; symmetric parallel-plate RF discharge; time-averaged sheath potentials; Absorption; Acceleration; Current density; Electrodes; Plasma accelerators; Plasma density; Plasma sheaths; Power supplies; Pulsed power supplies; Radio frequency;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.106816
  • Filename
    106816