DocumentCode :
1056056
Title :
A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation
Author :
Amer, Ahmed ; Hegazi, Emad ; Ragaie, Hani F.
Author_Institution :
Electron. & Commun. Eng. Dept., Ain Shams Univ., Cairo
Volume :
42
Issue :
2
fYear :
2007
Firstpage :
323
Lastpage :
328
Abstract :
This paper describes the design and implementation of a wideband merged LNA and mixer chip covering the frequency range from 0.1 to 3.85 GHz using 90-nm CMOS technology. Its high level of integration as well as its low power consumption makes it suitable for the rapidly growing software defined radio RF receivers. The chip performance achieves S11 below -10 dB along the entire band and a minimum single side band noise figure of 8.4 dB at IF frequency of 70 MHz. Power conversion gain is measured to be 12.1 dB while the input referred 1 dB compression point is measured to be -12.8 dBm. The chip core consumes only 9.8 mW from a 1.2 V supply with a die area, including the pads, of 0.88 mm2
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF mixers; low noise amplifiers; low-power electronics; radio receivers; software radio; 0.1 to 3.85 GHz; 1.2 V; 12.1 dB; 70 MHz; 8.4 dB; 9.8 mW; 90 nm; low noise amplifier; mixer chip; noise cancellation; software defined radio RF receivers; wideband merged CMOS LNA; wideband receiver; CMOS technology; Energy consumption; Gain measurement; Noise cancellation; Power measurement; Radio frequency; Receivers; Semiconductor device measurement; Software radio; Wideband; Low noise; merged LNA and mixer; multi-standard; noise cancellation; software defined radio; wideband receiver;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2006.889374
Filename :
4077154
Link To Document :
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