DocumentCode
1056093
Title
Design analysis of the thin-film CdS—Cu2 S solar cell
Author
Rothwarf, Allen ; Barnett, Allen M.
Author_Institution
University of Delaware, Newark, DE
Volume
24
Issue
4
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
381
Lastpage
387
Abstract
A detailed model of the CdS-Cu2 S solar cell was used to analyze design limits of cell configurations based on present laboratory technology. The parameters controlling the short-circuit current, open-circuit voltage, and fill factor are treated. The limits for each of these factors is obtained. The results indicate that the attainable conversion efficiency of the CdS-Cu2 S solar cell extrapolating from the present processing technology is roughly 10 percent, as compared to a theoretical efficiency of 16 percent, if no losses occurred. A similar analysis for a cell using Cd1-x Znx S in place of CdS yields an attainable efficiency of 15 percent and a theoretical efficiency of over 26 percent. The model identifies those processing parameters which must be improved in order to optimize cell efficiency. Once technology is improved, the processing parameters will be reassessed with an aim towards increasing the maximum attainable efficiency.
Keywords
Conductivity; Copper; Energy conversion; Etching; Fabrication; Heat treatment; Photovoltaic cells; Temperature; Transistors; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18744
Filename
1478936
Link To Document