DocumentCode :
1056101
Title :
30 GHz Band Low Noise Receiver for 30/20 GHz Single-Conversion Transponder
Author :
Mizuno, Hideki ; Kato, Haruhiko
Author_Institution :
NTT Public Corp., Yokosuka-shi, Japan
Volume :
1
Issue :
4
fYear :
1983
fDate :
9/1/1983 12:00:00 AM
Firstpage :
645
Lastpage :
653
Abstract :
This paper describes the design and performance of a low noise multicarrier receiver for a 30/20 GHz single-conversion satellite transponder. To develop a low noise receiver the following areas were examined: 1) analysis of spurious signals, 2) selection of devices most suitable for use on board the satellite, and 3) level diagram tradeoff studies. The receiver consists of a 30 GHz low noise GaAs FET amplifier, a 30/20 GHz GaAs Schottky barrier diode mixer, a dielectric resonated local oscillator, a 20 GHz high gain GaAs FET amplifier, and a 20 GHz high power (0.5 W) GaAs FET amplifier. The receiver has an 8 dB noise figure and a 48 dB gain in the frequency range from 28.395 GHz to 29.015 GHz (620 MHz frequency bandwidth).
Keywords :
Millimeter-wave FET amplifiers; Millimeter-wave oscillators; Millimeter-wave radio receivers; Satellite communication, onboard systems; Acoustical engineering; FETs; Frequency; Gallium arsenide; High power amplifiers; Low-noise amplifiers; Noise level; Satellites; Signal analysis; Transponders;
fLanguage :
English
Journal_Title :
Selected Areas in Communications, IEEE Journal on
Publisher :
ieee
ISSN :
0733-8716
Type :
jour
DOI :
10.1109/JSAC.1983.1145967
Filename :
1145967
Link To Document :
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