Title :
A Breakdown Voltage Multiplier for High Voltage Swing Drivers
Author :
Mandegaran, Sam ; Hajimiri, Ali
Author_Institution :
California Inst. of Technol., Pasadena, CA
Abstract :
A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8V on a 50 Omega load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; optical modulation; voltage multipliers; 10 Gbit/s; 50 ohm; 8 V; BV-doubler topology; BiCMOS process; SiGe; breakdown voltage multiplier; collector-emitter breakdown voltage; high voltage swing drivers; optical modulator driver; timing analysis; Breakdown voltage; Circuit topology; Costs; Driver circuits; Germanium silicon alloys; High speed optical techniques; Optical modulation; Silicon germanium; Switches; Timing; BV-Doubler; BV-multiplier; Breakdown voltage (BV); SiGe; breakdown voltage doubler; breakdown voltage multiplier; driver; optical modulator driver;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.889390
