Title :
Large-area high-efficiency (AlGa)As—GaAs solar cells
Author :
Kamath, G. Sanjiv ; Ewan, James ; Knechtli, Ronald C.
Author_Institution :
Hughes Research Laboratories, Malibu, CA
fDate :
4/1/1977 12:00:00 AM
Abstract :
An improved technique for making large-area high-efficiency (AlGa)As-GaAs solar cells is described. This includes a modified infinite melt liquid phase epitaxial process, for growing the desired (AlGa)As-GaAs and GaAs layers. Representative solar cells fabricated in this manner are described. Performance with an air mass zero efficiency in excess of 16 percent is shown, for cells of a 4-cm2area. Means are also shown for increasing this efficiency to about 18 percent.
Keywords :
Epitaxial growth; Fabrication; Gallium arsenide; Optical materials; Optical saturation; Photonic band gap; Photovoltaic cells; Surface resistance; Temperature; Thickness control;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18761
