DocumentCode
1056409
Title
A review of the techniques used to determine trap parameters in the MNOS structure
Author
Mar, H.A. ; Simmons, J.G.
Author_Institution
University of Toronto, Toronto, Ont., Canada
Volume
24
Issue
5
fYear
1977
fDate
5/1/1977 12:00:00 AM
Firstpage
540
Lastpage
546
Abstract
A series of experimental techniques based on the phenomenon of non-steady-state current flow during the dielectric relaxation of the MNOS device are examined. The non-steady-state currents are seen to be due to the response of traps in the different layers of the device, and the methods by which the correspondence between the peaks and the traps are determined are examined. Having established the correspondence it is seen that the trap parameters, both the energy distribution and the trap-capture cross sections, can be determined directly from experimental data.
Keywords
Councils; Dielectrics; Electric variables; Electron traps; Energy capture; Filling; Predictive models; Silicon; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18775
Filename
1478967
Link To Document