• DocumentCode
    1056409
  • Title

    A review of the techniques used to determine trap parameters in the MNOS structure

  • Author

    Mar, H.A. ; Simmons, J.G.

  • Author_Institution
    University of Toronto, Toronto, Ont., Canada
  • Volume
    24
  • Issue
    5
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    540
  • Lastpage
    546
  • Abstract
    A series of experimental techniques based on the phenomenon of non-steady-state current flow during the dielectric relaxation of the MNOS device are examined. The non-steady-state currents are seen to be due to the response of traps in the different layers of the device, and the methods by which the correspondence between the peaks and the traps are determined are examined. Having established the correspondence it is seen that the trap parameters, both the energy distribution and the trap-capture cross sections, can be determined directly from experimental data.
  • Keywords
    Councils; Dielectrics; Electric variables; Electron traps; Energy capture; Filling; Predictive models; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18775
  • Filename
    1478967