Title :
A review of the techniques used to determine trap parameters in the MNOS structure
Author :
Mar, H.A. ; Simmons, J.G.
Author_Institution :
University of Toronto, Toronto, Ont., Canada
fDate :
5/1/1977 12:00:00 AM
Abstract :
A series of experimental techniques based on the phenomenon of non-steady-state current flow during the dielectric relaxation of the MNOS device are examined. The non-steady-state currents are seen to be due to the response of traps in the different layers of the device, and the methods by which the correspondence between the peaks and the traps are determined are examined. Having established the correspondence it is seen that the trap parameters, both the energy distribution and the trap-capture cross sections, can be determined directly from experimental data.
Keywords :
Councils; Dielectrics; Electric variables; Electron traps; Energy capture; Filling; Predictive models; Silicon; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18775