DocumentCode :
1056409
Title :
A review of the techniques used to determine trap parameters in the MNOS structure
Author :
Mar, H.A. ; Simmons, J.G.
Author_Institution :
University of Toronto, Toronto, Ont., Canada
Volume :
24
Issue :
5
fYear :
1977
fDate :
5/1/1977 12:00:00 AM
Firstpage :
540
Lastpage :
546
Abstract :
A series of experimental techniques based on the phenomenon of non-steady-state current flow during the dielectric relaxation of the MNOS device are examined. The non-steady-state currents are seen to be due to the response of traps in the different layers of the device, and the methods by which the correspondence between the peaks and the traps are determined are examined. Having established the correspondence it is seen that the trap parameters, both the energy distribution and the trap-capture cross sections, can be determined directly from experimental data.
Keywords :
Councils; Dielectrics; Electric variables; Electron traps; Energy capture; Filling; Predictive models; Silicon; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18775
Filename :
1478967
Link To Document :
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