Barrier Height at the Graphene and Carbon Nanotube Junction

Author

Tae Geun Kim ; Un Jeong Kim ; Si Young Lee ; Young Hee Lee ; Yun Seop Yu ; Sung Woo Hwang ; Sangsig Kim

Author_Institution

Res. Center for Time-Domain Nano-Functional Device, Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

61

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

2203

Lastpage

2207

Abstract

Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.

Keywords

Schottky barriers; carbon nanotube field effect transistors; carbon nanotubes; electrophoresis; graphene; C; Schottky barrier height; all-carbon field-effect transistor structure; current-voltage characteristics; dielectrophoresis process; diode circuit model; graphene-carbon nanotube junction barrier height; prepatterned graphene source-drain electrodes; single-walled carbon nanotube network channel; source-drain-gate electrodes; Carbon nanotubes; Electrodes; Graphene; Integrated circuit modeling; Junctions; Logic gates; Transistors; Barrier height; FET; SPICE; SPICE.; carbon nanotube (CNT); graphene;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2317799

Filename

6810140