• DocumentCode
    1056418
  • Title

    Auger depth profiling of MNOS structures by ion sputtering

  • Author

    Johannessen, Jan S. ; Helms, C. Robert ; Spicer, William E. ; Strausser, Yale E.

  • Author_Institution
    University of Trondheim, Trondheim/NTH, Norway
  • Volume
    24
  • Issue
    5
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    547
  • Lastpage
    551
  • Abstract
    Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from nitride to "oxide" to silicon is a smooth one, with an oxide width of about 2.5-nm FWHM.
  • Keywords
    Chemicals; Conductive films; Electron beams; Microscopy; Morphology; Nitrogen; Silicon; Spectroscopy; Sputtering; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18776
  • Filename
    1478968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056418