• DocumentCode
    1056426
  • Title

    Charge-pumping investigations on MNOS structures

  • Author

    Schuermeyer, Fritz L. ; Young, Charles R. ; Sutton, William G.

  • Author_Institution
    Wright-Patterson Air Force Base, OH
  • Volume
    24
  • Issue
    5
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    552
  • Lastpage
    559
  • Abstract
    Charge-pump studies were performed on MNOS transistors. The well-known charge pumping due to surface states was observed. In addition, in source-drain protected structures, a well-pumping component was identified. The "scan-from-inversion" (SCI) concept was introduced for evaluation of these potential wells.
  • Keywords
    Charge pumps; Current measurement; Density measurement; MOS capacitors; MOSFETs; Pulse amplifiers; Pulse generation; Pulse modulation; Signal generators; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18777
  • Filename
    1478969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056426