Title :
Charge-pumping investigations on MNOS structures
Author :
Schuermeyer, Fritz L. ; Young, Charles R. ; Sutton, William G.
Author_Institution :
Wright-Patterson Air Force Base, OH
fDate :
5/1/1977 12:00:00 AM
Abstract :
Charge-pump studies were performed on MNOS transistors. The well-known charge pumping due to surface states was observed. In addition, in source-drain protected structures, a well-pumping component was identified. The "scan-from-inversion" (SCI) concept was introduced for evaluation of these potential wells.
Keywords :
Charge pumps; Current measurement; Density measurement; MOS capacitors; MOSFETs; Pulse amplifiers; Pulse generation; Pulse modulation; Signal generators; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18777
