• DocumentCode
    1056459
  • Title

    MNOS LSI memory device data retention measurements and projections

  • Author

    Hsia, Yukun

  • Author_Institution
    McDonnell Douglas Corporation, Monrovia, CA
  • Volume
    24
  • Issue
    5
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    568
  • Lastpage
    577
  • Abstract
    The retention characteristics of an MNOS LSI memory device are interpreted from the properties of its basic MNOS transistor. A technique is developed for measuring and predicting retention properties of large quantity device lots. A production lot test method for determining the 10 000-h data retention properties of LSI memory devices is proposed. Also included in the paper are measured failure rates, identifying the retention failures and reliability for a specific LSI memory device.
  • Keywords
    Large scale integration; Manufacturing; Nonvolatile memory; Packaging; Pins; Production; Random access memory; Read-write memory; Testing; Writing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18780
  • Filename
    1478972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056459