DocumentCode
1056516
Title
Some characteristics of nonvolatile CdSe thin-film memory transistors
Author
Yu, Karl K.
Author_Institution
Westinghouse Electric Corporation, Pittsburgh, PA
Volume
24
Issue
5
fYear
1977
fDate
5/1/1977 12:00:00 AM
Firstpage
591
Lastpage
593
Abstract
Improvement on CdSe thin-film memory transistors was made by optimizing the deposition condition of aluminum interfacial dopant (IFD) between the two dielectric insulators of the gate. Threshold voltage window of the devices was optimized at IFD thickness of about 10 to 20 Å and was found to increase with IFD deposition rate. Charging speed of the optimized devices was improved by an order of magnitude over previously unoptimized devices.
Keywords
Aluminum; Dielectric thin films; Fabrication; Liquid crystal displays; Nonvolatile memory; Semiconductor thin films; Sputtering; Thin film circuits; Thin film devices; Thin film transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18785
Filename
1478977
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