Simple model for ion-assisted etching using Cl2--Ar inductively coupled plasma: effect of gas mixing ratio

In this paper, we investigated the relationships between Cl₂--Ar mixing ratio, plasma parameters, plasma chemistry and etching kinetics using a combination of experimental investigations and modeling. Modeling of plasma chemistry was represented by zero-dimensional quasi-stationary model assuming electron energy distribution to be close to Maxwellian. For the surface kinetics, we used the simplified model based on the theory of active surface sites. The model confirmed the possibility of nonmonotonic behavior of etch rate behavior in the system with monotonic changes of fluxes of active species.