Wavelength dependence of multiplication noise in silicon avalanche photodiodes

Theoretical and experimental results on wavelength dependence of multiplication noise in silicon avalanche photodiodes are described. When the photodiode has a p-n⁺-junction and is illuminated from the n⁺-side, multiplication noise increases by decreasing optical wavelength. Effective ionization coefficient ratio keffis equal to exp ( ) for a uniform junction electric field, where is the ratio of ionization coefficients of electrons α and holes β. The multiplication noise depends on the product of optical absorption coefficient and the avalanche-region width wa. Calculations show that there exists an optimum wafor minimizing multiplication noise at a given wavelength. Theoretical results are shown to agree with results of experiments on diodes with a low-high-low impurity profile. Measured ionization coefficient ratio values are 0.04 and 0.08 at 0.811- and 0.633-µm wavelength, respectively.