DocumentCode :
105683
Title :
Implant-Defined 3 
3 In-Phase Coherently Coupled Vertical Cavity Surface Emitting Lasers Array
Author :
Ming-Ming Mao ; Chen Xu ; Yi-Yang Xie ; Qiang Kan ; Meng Xun ; Kun Xu ; Jun Wang ; Hai-Qiang Ren ; Hong-Da Chen
Author_Institution :
Key Lab. of Optoelectron. Technol., Beijing Univ. of Technol., Beijing, China
Volume :
5
Issue :
6
fYear :
2013
fDate :
Dec. 2013
Firstpage :
1502606
Lastpage :
1502606
Abstract :
Two-dimensional in-phase coherently coupled vertical cavity surface emitting laser (VCSEL) array with high beam quality was fabricated by proton implantation. Indium-tin-oxide (ITO) current spreading layer was employed to improve the uniformity of the injection current. This makes a coherent array to operate in in-phase mode even in a relatively larger scale. The appropriate thickness of ITO current spreading layer was obtained by experiment (80 nm). The procedure of proton implantation defined array is considerably simple and low cost. A 3 × 3 in-phase coherently coupled array with 2.4° (1.28 × D.L.) of lobe beamwidth was achieved. It sufficiently demonstrates the advantages of the high beam quality of the in-phase coherently coupled arrays. The output power of the array was up to 4.5 mw under pulse-wave condition.
Keywords :
indium compounds; ion implantation; laser beams; laser cavity resonators; laser modes; optical fabrication; semiconductor laser arrays; surface emitting lasers; tin compounds; ITO; beam quality; implant-defined in-phase coherently coupled vertical cavity surface emitting laser array; in-phase mode; indium-tin-oxide current spreading layer; injection current; laser output power; lobe beamwidth; power 4.5 mW; proton implantation; pulse-wave condition; two-dimensional in-phase VCSEL array; wavelength 80 nm; Coherently coupled VCSEL array; high beam quality; in-phase;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2292351
Filename :
6672002
Link To Document :
