Title :
A two-layer microwave FET structure for improved characteristics
Author :
Das, Mukunda B. ; Esqueda, Paul
Author_Institution :
The Pennsylvania State University, University Park, PA
fDate :
6/1/1977 12:00:00 AM
Abstract :
The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.
Keywords :
Acoustical engineering; Doping; Electrodes; Equations; Frequency; Linearity; Microwave FETs; Noise reduction; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18817
