• DocumentCode
    1056850
  • Title

    Current and base transit-time relations in normal and inverted (IIL) bipolar transistors

  • Author

    Elsaid, M.H. ; Roulston, D.J. ; Watt, L. K A

  • Author_Institution
    University of Waterloo, Waterloo, Ont., Canada
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    761
  • Lastpage
    763
  • Abstract
    Analytic expressions representing a double-diffused transistor impurity profile are used to calculate the current density and base transit time in a normal transistor and in an inverted (IIL) structure. The calculated current density and transit time for the simplified model and those computed for a double Gaussian impurity profile using the variable boundary regional approach are compared.
  • Keywords
    Acceleration; Bipolar transistors; Current density; Electron emission; Epitaxial layers; Exponential distribution; Fabrication; Impurities; Neodymium; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18818
  • Filename
    1479010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056850