DocumentCode
1056892
Title
Transient response of ohmic contacts operated in the two-carrier regime
Author
Caruso, C. ; Spirito, P. ; Vitale, F.G.
Author_Institution
Istituto Elettrotecnico, Naples, Italy
Volume
24
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
769
Lastpage
771
Abstract
The transient response of ohmic contacts with different absorbing properties for minority carriers is studied in bulk structures subjected to avalanche injection. A first-order model for the dynamics of the avalanche injection is developed and compared with experimental results, showing a relatively long transient for the standard contacts.
Keywords
Cathodes; Doping; Ohmic contacts; Semiconductor diodes; Silicon alloys; Standards development; Switches; Transient response; Vacuum technology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18822
Filename
1479014
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