Title :
3-10 GHz self-biased resistive-feedback lna with inductive source degeneration
Author :
Feng, C. ; Yu, Xiao Peng ; Lu, Z.H. ; Lim, Wei Meng ; Sui, W.Q.
Author_Institution :
Yuquan Campus, Zhejiang Univ., Hangzhou, China
Abstract :
A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 - 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm2 and draws 12 mA from 1.2 V power supply.
Keywords :
CMOS analogue integrated circuits; feedback amplifiers; low noise amplifiers; microwave amplifiers; microwave integrated circuits; wideband amplifiers; Global Foundries CMOS process; current 12 mA; frequency 3 GHz to 10 GHz; inductive source degeneration technique; input-matching network; low-noise amplifier; noise figure 3.5 dB to 4.3 dB; resistive feedback; self-biased resistive-feedback LNA; size 65 nm; voltage 1.2 V; wideband matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4472
