DocumentCode :
1056912
Title :
Reliability results on electron bombarded semiconductor power devices
Author :
Bates, D.J. ; True, R.
Author_Institution :
Watkins-Johnson Company, Palo Alto, CA
Volume :
24
Issue :
6
fYear :
1977
fDate :
6/1/1977 12:00:00 AM
Firstpage :
773
Lastpage :
774
Abstract :
A number of pulse and CW EBS power amplifiers have undergone extended life test. No failures have been recorded in over 180 000 test hours on eight CW devices, and one failure occurred in 90 000 test hours on eight pulsed devices.
Keywords :
Diodes; Electronic equipment testing; Electrons; Life testing; Power amplifiers; Pulse amplifiers; Pulse measurements; Pulse modulation; Radiofrequency amplifiers; Semiconductor device reliability;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18824
Filename :
1479016
Link To Document :
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