Title :
Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements
Author :
Draper, Bruce ; Dockerty, Robert ; Shaneyfelt, Marty ; Habermehl, Scott ; Murray, James
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
For the first time, NROM-style nonvolatile memory elements were fabricated in SOI and irradiated. Total dose characterizations of these transistors indicate that this new style of memory can be functional to at least 500 krad (SiO2).
Keywords :
random-access storage; read-only storage; silicon compounds; silicon-on-insulator; NROM-style SOI; SiO2; nonvolatile memory elements; total dose radiation response; Dielectric devices; Dielectric substrates; Electrons; Nonvolatile memory; Radiation effects; Radiation hardening; Read-write memory; SONOS devices; Tunneling; Voltage; CMOS memory integrated circuits; radiation effects; radiation hardening; semiconductor radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2007566
