Title :
An SOI structure for flash A/D converter
Author :
Kumamoto, Toshio ; Nakaya, Masao ; Kusunoki, Shigeru ; Nishimura, Tadashi ; Yazawa, Nobuharu ; Akasaka, Yoichi ; Horiba, Yasutaka
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A 4-bit flash A/D converter has been fabricated using a silicon-on-insulator (SOI)/CMOS process technology. A transistor structure is introduced to suppress the floating-body effect in SOI n-channel transistor. The maximum conversion rate is 30 Msample/s. The power consumption is 18 mW (V/sub dd/=5 V) at 1 Msample/s. The SOI A/D converter is useful for the realization of image signal processing systems by using a stacked three-dimensional structure.<>
Keywords :
CMOS integrated circuits; analogue-digital conversion; 18 mW; CMOS process technology; SOI n-channel transistor; flash A/D converter; floating-body effect; image signal processing systems; maximum conversion rate; stacked three-dimensional structure; Bandwidth; Broadband amplifiers; CMOS analog integrated circuits; Differential amplifiers; Frequency; Image converters; Linearity; Silicon on insulator technology; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
