DocumentCode
1057209
Title
F2 laser deposition of CdTe microcrystallites-doped fluoropolymer thin films
Author
Inoue, Shingo ; Fujii, Takeo ; Ueno, Yoshiaki ; Kannari, Fumihiko
Author_Institution
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
Volume
1
Issue
3
fYear
1995
fDate
9/1/1995 12:00:00 AM
Firstpage
908
Lastpage
915
Abstract
Crystalline thin films of polytetrafluoroethylene (PTFE) were deposited by F2 laser (157 nm) ablation in 200 mTorr Ar gas atmosphere. Combining this PTFE thin-film process with CdTe microcrystallites synthesis in sizes of 3-7 nm via KrF laser (248 nm) ablation, CdTe microcrystallites-doped PTFE thin films were fabricated. The X-ray photoemission spectra show that the main architecture of PTFE and CdTe are maintained in the doped films. CdTe microcrystallites doped in PTFE matrix show an absorption edge shift toward higher energy and a third-order optical nonlinearity, which are induced by the quantum size effect
Keywords
II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; crystallites; electron spectroscopy; laser ablation; pulsed laser deposition; semiconductor thin films; 157 nm; 200 mtorr; 248 nm; 3 to 7 nm; Ar; Ar gas atmosphere; CdTe; CdTe microcrystallites; CdTe microcrystallites synthesis; F2; F2 laser deposition; KrF; KrF laser; PTFE thin-film process; X-ray photoemission spectra; absorption edge shift; crystalline thin films; doped films; laser ablation; microcrystallites-doped fluoropolymer thin films; quantum size effect; third-order optical nonlinearity; Argon; Atmosphere; Crystallization; Gas lasers; Laser ablation; Optical films; Photoelectricity; Sputtering; Transistors; X-ray lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/2944.473678
Filename
473678
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