Title :
193-nm lithography
Author :
Rothschild, Mordechai ; Forte, Anthony R. ; Horn, Mark W. ; Kunz, Roderick R. ; Palmateer, Susan C. ; Sedlacek, Jan H.C.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
fDate :
9/1/1995 12:00:00 AM
Abstract :
The trend in microelectronics toward printing features 0.25 μm and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory
Keywords :
excimer lasers; integrated circuit technology; optical materials; optical projectors; photolithography; photoresists; 0.25 mum; 193 nm; ArF; lithography; microelectronics; multiyear program; optical materials; photo-resist chemistry; photo-resist processes; printing; projection systems; Argon; Bandwidth; Lenses; Lithography; Optical design; Optical materials; Optical refraction; Printing; Prototypes; Resists;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.473679
