Green LED´s fabricated by Zinc diffusion into bulk GaP grown by the SSD method

Nitrogen-doping levels of up to 3.10¹⁷cm^-3have been achieved in synthesis, solute-diffusion (SSD) crystals by introducing a mixture of 100-mbar nitrogen and 0.05-mbar ammonia into the growth ampules. Green-light-emitting diodes were fabricated from this material by Zn diffusion. Quantum efficiencies of up to 0.01 percent were obtained which are comparable with commercially available VPE diodes. Some SSD diodes had an emission peak at about 700 nm in addition to the green peak; this 700-nm peak was caused by oxygen contamination that could be reduced by careful preparation of the growth ampules.