An integrated SIS mixer and HEMT IF amplifier

Author

Padin, S. ; Woody, D.P. ; Stern, J.A. ; LeDuc, H.G. ; Blundell, R. ; Tong, C.-Y.E. ; Pospieszalski, M.W.

Author_Institution

Owens Valley Radio Obs., California Inst. of Technol., Pasadena, CA, USA

Volume

44

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

987

Lastpage

990

Abstract

Design details are given for a 205-270 GHz fixed-tuned SIS receiver in which the SIS mixer and HEMT IF amplifier are integrated into a single compact unit. The mixer and IF amplifier are connected with an inductor which provides the reactive part of the optimum input impedance for the HEMT. This simple coupling circuit gives an IF bandwidth of ~4 GHz. The receiver has a DSB noise temperature in the range 35-80 K over the 205-270 GHz local oscillator band and 0.5-4.5 GHz IF band

Keywords

HEMT circuits; impedance matching; intermediate-frequency amplifiers; millimetre wave integrated circuits; millimetre wave mixers; millimetre wave receivers; superconducting microwave devices; superconductor-insulator-superconductor mixers; 0.5 to 4.5 GHz; 205 to 270 GHz; 4 GHz; EHF; HEMT IF amplifier; MM-wave IC; SIS mixer; coupling circuit; fixed-tuned SIS receiver; inductor; integrated mixer/amplifier; optimum input impedance; Bandwidth; Capacitance; Capacitors; Circuits; HEMTs; Impedance; Inductors; Shunt (electrical); Slabs; Spirals;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.506643

Filename

506643