13-nm extreme ultraviolet lithography

Author

Stulen, Richard H.

Author_Institution

Sandia Nat. Labs., Livermore, CA, USA

Volume

1

Issue

3

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

970

Lastpage

975

Abstract

The National Technology Roadmap for Semiconductors projects the need for 0.1 micron lithography for leading-edge IC production, beginning in the year 2007. Reduction imaging using extreme ultraviolet light, one-to-one printing using X-rays, and advanced electron beam technologies are the front runners for use at this design rule. This paper describes research and development activities for projection printing using extreme ultraviolet lithography (EUVL). This approach, known as NX EUV, is the logical extension of optical projection lithography and offers many of its advantages, including robust mask technology and reduction printing while maintaining a large depth of focus (DOF) at modest K-factor. The development of this technology is now in the research and development phase. This paper reviews its current status and describes the building blocks of a generic EUVL tool

Keywords

X-ray lithography; photolithography; research initiatives; technological forecasting; 13 nm; 13-nm extreme ultraviolet lithography; EUVL; NX EUV; National Technology Roadmap for Semiconductors; X-rays; advanced electron beam technologies; building blocks; design rule; generic EUVL tool; large depth of focus; leading-edge IC production; modest K-factor; one-to-one printing; projection printing; reduction imaging; reduction printing; research and development phase; robust mask technology; Electron beams; Electron optics; Lead compounds; Lithography; Optical imaging; Printing; Production; Research and development; Ultraviolet sources; X-rays;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.473686

Filename

473686