DocumentCode :
1057297
Title :
DARPA, SDI, and GaAs
Author :
Karp, Sherman ; Roosild, Sven
Author_Institution :
Defense Advanced Research Projects Agency
Volume :
19
Issue :
10
fYear :
1986
Firstpage :
17
Lastpage :
19
Keywords :
Circuits; FETs; Gallium arsenide; Germanium; Photonic band gap; Signal processing; Silicon; Substrates; Surface charging; Temperature distribution;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/MC.1986.1663064
Filename :
1663064
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1057297
